High-Performance Focal Plane Array Based on InAs–GaSb Superlattices With a 10-$\mu{\hbox {m}}$ Cutoff Wavelength

We report on the demonstration of a focal plane array based on Type-II InAs-GaSb superlattices grown on n-type GaSb substrate with a 50% cutoff wavelength at 10 mum. The surface leakage occurring after flip-chip bonding and underfill in the Type-II devices was suppressed using a double heterostructure design. The R
₀
A of diodes passivated with SiO
₂
was 23 Omegamiddotcm
²
after underfill. A focal plane array hybridized to an Indigo readout integrated circuit demonstrated a noise equivalent temperature difference of 33 mK at 81 K, with an integration time of 0.23 ms.