Improved High Temperature Retention for Charge-Trapping Memory by Using Double Quantum Barriers

We have fabricated the [TaN-Ir
₃
Si]-HfAlO-LaAlO
₃
-Hf
_0.3
O
_0.5
N
_0.2
-HfAlO-SiO
₂
-Si double quantum-barrier charge- trapping memory device. Under fast 100 mus and low plusmn8 V program/erase (P/E) condition, an initial memory window of 2.6 V and good extrapolated ten-year retention window of 1.9 V are achieved at 125degC. Very small P/E retention decays of 64/22 mV/dec at 125degC are measured due to double quantum barriers to confine the charges in deep-trapping-energy Hf
_0.3
O
_0.5
N
_0.2
well.