New Type of Thermal-Isolation Structure Based on PI and OPS Used in Uncooled Infrared Detector

A new type of thermal-isolation structure based on polyimide (PI) and oxidized porous silicon (OPS) is presented. The structure has the advantage of simpler process, lower cost, and higher yield. The mechanism is described briefly in this paper and the process is studied in detail. The thermal-isolation capability of the structure is verified by a-Si bolometer with PI and OPS complex thermal isolation structure and excellent performance has been achieved.