Monothically Integrated Long-Wavelength Tunable Photodetector

This paper demonstrated a tunable long-wavelength photodetector by using the heteroepitaxy growth of $\hbox{InP-In}_{0.53}\hbox{Ga}_{0.47}\hbox{As-InP}$ p-i-n structure on a GaAs-based GaAs/AlAs Fabry–PÉrot filter structure. High-quality heteroepitaxy was realized by employing a thin low-temperature buffer layer. A wavelength tuning range of 10.0 nm, an external quantum efficiency of about 23%, a spectral linewidth of 0.8 nm, and a 3-dB bandwidth of 6.2 GHz were simultaneously obtained in the device.