Fabrication and study of low temperature polycrystalline silicon TFT technology applied to step doping LIGBT

Thin film transistor lateral insulated gate bipolar transistors (TFT-LIGBTs) were fabricated combining the technology of thin film transistor and the power structure used excimer laser anneal in this paper. Excimer laser anneal and substrate heating at 400°C simultaneously for TFT-LIGBT to integrate with the driving circuit of system-on-panel (SOP) and other circuit in the future. The maximum breakdown voltage of step doping TFT-LIGBT after excimer laser annealing is 280 V with L
_drift
=35 μm. The ON/OFF current ratio is 1.59×10
⁶
. It is higher than solid phase crystallization (SPC)-LIGBT 1.74 about 10
⁶
times at V
_anode
=30 V with L
_drift
=35 μm and even more than TFT-LDMOS 1.42×10
⁵
10 times.