Electrical properties of bilayer SrBi2Ta2O9/Ba(Zr0.1Ti0.9)O3 thin films for ferroelectric random access memory applications

Ferroelectric thin films of SrBi
₂
Ta
₂
O
₉
(SBT) or bilayered SrBi
₂
Ta
₂
O
₉
/Ba(Zr
_0.1
Ti
_0.9
)O
₃
(SBT/BZT) are successfully deposited on Si substrate under the optimal RF magnetron sputtering conditions, and their electrical and ferroelectric characteristics are discussed. The memory window, capacitance and leakage current density of MFS structures under different oxygen concentrations are also reported. The memory window of bilayered SBT/BZT structure shows larger than one of single layer SBT structure. Besides, the bilayered SBT/BZT structure exhibits a ferroelectric behavior with a remanent polarization of 8 μC/cm
²
and a coercive field of and 130 kV/cm.