Fabricate Non-Volatile Ferroelectric Random Access Memory Devices using BTV as Gate Oxide

In this study, the Bi
_3.9
Ti
_2.9
V
_0.08
O
₁₂
(BTV) thin films have been well deposited on the Pt/Ti/SiO
₂
/Si substrate. The optimum radio frequency (RF) deposition parameters of BTV thin films are developed, and they are RF power of 130 W, substrate temperature of 550°C, chamber pressure of 10 m Torr, and oxygen concentration of 25 %. As the applied voltage is increased to 10 V, the remnant polarization and coercive field of BTV thin films are about 3.8 μC/cm
²
and 220 kV/cm. The counterclockwise current hysteresis and memory window of non-volatile FeRAM devices property are observed, and that can be used to indicate the switching effect of ferroelectric polarization of BTV thin films. Finally, the BTV FeRAM devices with channel width = 40μm and channel length = 20μm has been successfully fabricated and the I
_D
-V
_G
transfer characteristics are also investigated in this study.