A new process and tool for metal/high-к gate dielectric stack for sub-45 nm CMOS manufacturing

In this paper we report the results of a new process and tool to deposit metal/high-kappa gate dielectric stack. Hafnium oxide dielectric of 0.39 nm EOT is deposited using monolayer photo-assisted deposition process on a home-built system to provide a reliable and robust process to tackle the needs of the future CMOS generations. We report the results of 0.39 nm EOT gate dielectric material with a leakage current density value of about 1 times 10
^-12
A/cm
²
for gate voltage from +3 V to -3 V. The data presented in this paper demonstrate that the process is robust and manufacturing tools can be developed without any fundamental barrier.