Low temperature MOCVD TiN process for 45nm contact metallization

A low temperature (LT) MO TiN process has been developed to improve the bottom step coverage of MOCVD TiN film. The film properties, including film composition, grain orientation, and structure, have been characterized and are similar to the film properties of the original 405°C MO TiN process. It was also demonstrated that there is no negative impact of LT MO TiN on the iLB/W CVD fill/WCMP integration flow. The extended run showed that the new LT MO-TiN process is stable and has excellent particle performance.