Lumped Element Coplanar-Microstrip-Transition Model for Si-RFICs up to 90 GHz

The development of a lumped element model for monolithic integrated transitions from coplanar probe pads to microstrip line structures is presented for a frequency range up to 90 GHz. Several passive test structures have been fabricated in a five metal layer SiGe BiCMOS process technology. The values of the lumped elements are determined based on measurements and are tabulated in this work. In order to verify the performance of the proposed transition model, comparisons with measurements of known structures are carried out.