RF Noise Modeling of CMOS 90nm Device Using Enhanced BSIM4 with Additional Noise Source

A practical methodology for accurately modeling RF noise performance of deep submicron CMOS technologies using BSIM4 model is presented in this paper. The noise characterization parameters are extracted from measurements from 1.0GHz to 18.0GHz performed on 90nm RF CMOS device. Based on the foundry provided model, RF and low frequency noise are fitted with slightly tuned BSIM4 parameters and extrinsic parasitics. Then accurate noise modeling performance is achieved by just one additional frequency dependent noise source using the van der Ziel configuration to fit accurately the four noise parameters over wide range of frequencies and bias conditions.