Determination of the piezoresistivity of microcrystalline silicon-germanium and application to a pressure sensor

This paper reports for the first time the experimentally obtained piezoresistive coefficients of microcrystalline silicon-germanium (mucSiGe), which is proposed as a new structural material for piezoresistive micro-electromechanical systems (MEMS). We measure the resistance variation of several piezoresistors under a uniform and uniaxial stress provided by a four point bending (4 PB) fixture. The stress values are determined both by theory and from finite elements (FE) simulations. FE simulations are done as well to investigate the potential of using mucSiGe for a piezoresistive pressure sensor application.