Effect of Base Width and Implantation Dose on Performance of 3-Terminal Magnetotransistor

This paper presents the effect of base width and implantation dose on electrical carriers in the magnetotransistor deflected by the Lorentz force (F
L
) from magnetic field. The structure of magnetotransistor is designed like a structure of a PNP bipolar junction transistor which comprises of 3 terminals, i.e., emitter, collector and base. The base width (L) is varied (10, 20 and 30 μm) where the spacing between collector and base is fixed at 40 μm. The emitter and collector regions are doped with boron (BF
2
) at the dose of 3x10
¹⁵
, 5x10
¹⁵
and 1x10
¹⁶
ions/cm
²
. It is found that the sensitivity is increased when increasing L and the implantation dose. It is also demonstrated that the linear relationship between the output voltage of the magnetotransistor circuit and magnetic field can be obtained.