RF Capacitance Extraction Utilizing a Series Resistance Deembedding Scheme for Ultraleaky MOS Devices

An accurate extraction method for series resistance and capacitance based on RF
S
-parameter measurement in ultraleaky MOS devices is presented in this paper. The method is proven by using a three-element equivalent circuit model for a capacitor and a well-known microwave theory. The proposed method improves the measurement accuracy and significantly reduces the frequency-dependence of capacitance. This method is demonstrated for a 1.5 nm SiO
₂
dielectric NMOSFET.