Ultra Low Power Narrow Band LNA

Ultra low powers LNAs are very challenging blocks. Shown in this paper is a design approach for less than 2.5 dB noise figure at 2.4 GHz with only 500 muA. On chip inductors in tsmc 0.13 mum technology was used with IV supply. The NQS effect is eliminated by using a capacitance parallel to Cg, in the inductive degeneration method. Low power architecture using transistors in sub-threshold mode. The design achieves fairly high FOM for narrow band LNAs. By this approach the design trade-off is between power consumption and inductors noise.