Semiconductor nanowire manipulation using optoelectronic tweezers

We demonstrate, for the first time, the trapping and manipulation of individual Si nanowires by light-induced dielectrophoresis, or optoelectronic tweezers (OET). Trapping of single Si nanowires, with a diameter of 100 nm and length of 5 μm, is reported using OET with an optical power density of 100 W/cm
²
. We show that OET can separate two adjacent Si nanowires and transport a single nanowire at a speed of 135 μm/s. Array patterns of Si nanowires have also been demonstrated.