Numerical Modelling Study of the Sensitivity of SOS MOSFET Characteristics to Silicon film Thickness and Back Surface Trapped Charge Variation

In this paper we present a numerical study of the sensitivity of silicon-on-sapphire MOSFET characteristics to silicon film thickness and back surface trapped charge. We demonstrate that the thickness of the film and the back surface trapped charge have a significant effect on the operation of the device and in particular the reduction of the threshold voltage.