External Field Effects on Photoluminescence Properties of Blue InGaN Quantum-Well Diodes

Photoluminescence (PL) properties of blue InGaN quantum-well light-emitting diodes have been investigated at 20 K as a function of excitation power and reverse bias voltage (external field). PL intensity reduction of the main blue emission band is observed by increasing the reverse field. The photoexcitation power dependence suggests that the hole escape process plays an important role for the determination of PL intensity under the reverse bias conditions.