A 26 – 65 GHz GaAs pHEMT cascaded single stage distributed amplifier with high gain/area efficiency

This paper demonstrates the design of a miniature three-stage cascaded single stage distributed amplifier (CSSDA), which functions over the frequency range from 26 GHz to 65 GHz with a 16.5 dB small signal gain and a gain bandwidth product (GBW) of 260 GHz. This three-stage CSSDA was designed and fabricated using a 0.15 μm GaAsbased pseudomorphic high electron-mobility transistor (pHEMT) MMIC foundry process provided by WIN Semiconductor, and the chip size is compact as 1.65 × 0.83 mm
²
which yields the best gain/area efficiency among the previous works.