Analysis of AlGaN/GaN HEMT modulated by photosystem I reaction centers

This paper presents for the first time a practical substitute to the laboratory (KFM) techniques for electrical characterization of PS I reaction centers which is necessary precondition to eventual commercial realization of molecular photovoltaic devices. The experimental study and an analytical model have been presented to investigate the charge effects of PS I reaction centers on the characteristics of AlGaN/GaN high electron mobility transistor (HEMT).