Pseudo quantum dot behavior due to excitonic transitions in wide gap quantum wire lasers: InGaN-AlGaN and ZnCdSe-ZnMgSSe material systems

This paper presents simulations on InGaN-AlGaN and ZnCdSe-ZnMgSSe quantum wire lasers having excitonic transitions. We have found that the threshold current density (J
_th
) in a quantum wire laser is almost temperature independent when exciton binding energies are in the range of 30-50 meV. This behavior is like quantum dot lasers having free carrier transitions.