Physics-based numerical simulation for design of high-voltage, extremely-high current density SiC power devices

This paper presents a selection of results from numerical studies addressing various problems highly relevant to the operation of SiC power devices in power systems such as the speed optimization of high-voltage SiC PiN diodes and the operation of SiC thyristors under extremely- high-current pulse-power conditions. Various methods used to optimize the reverse-recovery performance of 4H-SiC PiN power diodes are studied, including base life time control, emitter efficiency reduction, and regional lifetime control. Pulse-power thyristors are also simulated to determine the limits of reliable performance due to self-heating-induced failure.