Electrical properties of HfO2/InAs MOS capacitors

In this work, the first investigation of Au/Ti/HfO
₂
/InAs metal-oxide-semiconductor capacitors is reported. The HfO
₂
is deposited by atomic layer deposition and characterized by current-voltage and capacitance-voltage measurements. The effects of surface treatment, deposition temperature, post-deposition anneal, and film thickness on breakdown field, leakage current, capacitance, and frequency dispersion are studied with the aim of producing HfO
₂
-InAs interfaces suitable for use in InAs-channel MOSFETs.