Highly Scalable Vertical Double Gate NOR Flash Memory

A Sub-50 nm body thickness (TSi), vertical channel (not FINFET), double gate, multi-bit NOR flash cell is fabricated on bulk-silicon substrate and is electrically characterized. This floating gate, conventional flash cell (no exotic materials), is potentially scalable with below 8F
²
size beyond 32 nm node and is enabled by several key unit process innovations. The device is extensively characterized for program/erase, endurance, and charge interference on a shared thin body, which is important for scalability, density and multi-bit operation.