Low EMI noise techniques of the 6th generation IGBT module

This paper describes the mechanism of radiation EMI noise coming from power electronics and introduces the applied technology of Fuji 6
^th
generation IGBT modules, which have drastically improved the trade-off of radiation EMI noise and power dissipation loss. The application of new packaging technology has achieved a reduction in radiation noise of about −5dB by reducing the radiation noise loop area. New trench gate IGBTs have achieved a reduction in the radiation noise without significantly increasing switching losses. As a result, the total radiation noise is reduced by − 15 dB with the same dissipation losses compared to the conventional IGBT