Monolithic GaAs p-i-n diode switch circuits for high-power millimeter-wave applications

Two different Ka-band single-pole, double-throw (SPDT) switch circuits using monolithic GaAs epitaxial p-i-n diode technology are presented. The lowest insertion loss is 0.7 dB at 35 GHz, and isolation is better than 32 dB from 30 to 40 GHz. The power-handling capability is at least +38 dBm pulsed and +35 dBm continuous wave. Switching speed rise- and fall times are 2 ns.<
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