Impact of Auger Recombination on Charge Collection of a 6H-SiC Diode by Heavy Ions

Charge collection efficiency (CCE) generated in a 6H-SiC p
⁺
n diode by impact of heavy ions was evaluated by the transient ion beam induced current (TIBIC) technique. Numerical analysis by using technology computer aided design (TCAD) concludes that the Auger recombination process reduces CCE. Comparing experimentally measured CCEs with calculated ones revealed that the ambipolar Auger coefficient of about 3 times 10
^-29
cm
⁶
/s.