Capacitance-voltage characteristics of MOS capacitors with Ge anaocrystals embedded in HfO2 gate material

Ge nanocrystals (NCs)-embedded MOS capacitors are chareacterized in this work using capacitance-voltage measurement. High-k dielectrics HfO
2
are employed for the gate material in the MOS capacitors, and the C-V curves obtained from O
2
-and NH
3
-annealed HfO
2
films are analyzed.