Electrical characteristics of organic ferroelectric FET integrated with Si using P(VDF-TrFE) copolymer films for nonvolatile memory devices

The feasibility of nonvolatile memory (NvRAM) structure with nondestructive readout (NDRO) capability based on Si-MOSFET integrated with a ferroelectric polyvinylidene fluoride trifluoroethylene copolymer (P(VDF-TrFE)) as a gate along with SiO
₂
buffer has been demonstrated. Measurement of channel current I
_DS
shows no saturation due to uniform ferroelectric field across gate channel. Modulation of channel conductance is attributed to sensitively switchable polarization field. Remarkable switching drain current ratio of >10
⁵
times with ON/OFF operations were obtained. Memory window is obtained to show the polarization field regulating threshold voltages of the integrated organic polymer FET.