Approximate analytic current-voltage calculations for MODFETs

Two analytic techniques to calculate the current-voltage (I-V) characteristics of modulation-doped field-effect transistors (MODFETs) are presented. The present methods are based on the model of C.S. Chang and H.R. Fetterman (1987). However, the velocity-field dependence is approximated by a different empirical relation than was used to model Si MOSFETs. The advantage of using this empirical relation is that it gives analytic expressions for the I-V characteristics and the microwave small signal parameters. Moreover, the theoretical results are in good agreement with the experimental results.<
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