HfLaON n-MOSFETs Using a Low Work Function $ \hbox{HfSi}_{x}$ Gate

At a 1.2-nm equivalent oxide thickness, $\hbox{HfSi}_{x}/\break \hbox{Hf}_{0.7}\hbox{La}_{0.3}\hbox{ON}$ n-MOSFETs showed an effective work function of 4.33 eV, a low threshold voltage of 0.18 V, and a peak electron mobility of 215 $ \hbox{cm}^{2}/(\hbox{V} \cdot \hbox{s})$. These self-aligned and gate-first $\hbox{HfSi}_{x}/\hbox{Hf}_{0.7}\hbox{La}_{0.3}\hbox{ON}$ n-MOSFETs were processed using standard ion implantation and 1000-$^{\circ} \hbox{C}$ rapid thermal annealing, making them fully compatible with current very large scale integration fabrication lines.