An accurate model of subbreakdown due to band-to-band tunneling and some applications

An accurate model and a numerical analysis of the subbreakdown phenomenon due to band-to-band tunneling in a thin-gate-oxide n-MOSFET is described. Results calculated by means of this model agree well with experimental results. This model provides a good understanding of the subbreakdown phenomenon. Furthermore, it shows how to design the distribution of impurity density in the drain region in order to suppress the subbreakdown current.<
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