The effect of field dependent emission on the current-voltage characteristics of a p/sup +/-p/sup -/-p/sup +/ Si:Au:B device

The current-voltage characteristics of a silicon p/sup +/-p/sup -/-p/sup +/ device doped with boron and gold which showed sublinear behavior at moderately high fields are discussed. With the use of low-frequency voltage noise data measured as a function of electric field, it was determined that the sublinear current-voltage characteristics are caused by a decrease in the hole concentration with increasing electric field. This decrease is caused by a field-induced decrease in the hole emission coefficient, which is larger than the associated field induced decrease in the hole capture coefficient.<
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