Characterization of Al/sub 0.3/Ga/sub 0.7/As/GaAs quantum-well delta-doped channel FET grown by molecular-beam epitaxy

The authors investigated the transport properties of electrons in delta-doped channels formed both in bulk GaAs and in quantum wells by Hall and Schubnikov-de Haas measurements. They also investigated the DC and microwave characteristics of FETs made from Al/sub 0.3/Ga/sub 0.7/As/GaAs heterostructures with a quantum-well delta-doped channel. FETs showed a high drain current capability, large breakdown voltage, low output conductance, large intrinsic transconductance, and large gate voltage swing around maximum transconductance.