Room-temperature continuous wave vertical surface-emitting GaAs injection lasers grown by molecular-beam epitaxy

Summary form only given, as follows. Room-temperature continuous-wave oscillation with emission power in excess of 1 mW was achieved in vertical-cavity surface-emitting lasers containing a 0.5- mu m-thick GaAs active layer sandwiched between a distributed Bragg reflector (DBR) and a metal-DBR hybrid reflector grown by MBE. The threshold current is 50 mA for a 15- mu m-diameter device. Th temperature dependence of the threshold current gives T/sub 0/=115 K.