Reduction of Acoustic Phonon Limited Electron Mobility due to Phonon Confinement in Silicon Nanowire MOSFETs

Reduction of acoustic phonons in a silicon nanowire (SiNW) MOSFET is analyzed in detail, and their impact on electron transport is examined theoretically. The form factor with confined phonons was found to be larger than that with bulk-like phonons. This increase would make electron mobility with confined phonons smaller than that with bulk-like phonons.