High performance In2O3 nanowire transistors using organic gate nanodielectrics

In this study, we report high performance nanowire transistors using individual in 203 nanowires as channels, a multilayer self-assembled organic nano-dielectric (SAND) as the gate insulator (thickness -15 nm, capacitance -180 nF/cm
²
, and leakage current density ~1x10
^-6
A/cm
²
up to 2 V). The NWTs use an individually addressable indium zinc oxide (IZO) bottom-gate and Al source/drain electrodes.