AlGaN/GaN HEMTs on Diamond Substrate

In this paper AlGaN/GaN high electron mobility transistor (HEMT) fabricated on diamond substrate is presented. Epitaxial AlGaN/GaN layers were first grown on high resistivity Si (111) substrate and transferred to polycrystalline diamond substrate, which was separately grown by chemical vapor deposition (CVD). It is concluded that these are the best-reported results for a transistor using GaN on diamond material.