High-performance ion-implanted MES-FET on InP using enhanced barrier self-aligned Schottky gate

An enhanced barrier Schottky diode with a barrier height of 0.78 eV and an ideality factor of 1.04 was fabricated by chemically modifying the surface of InP without the aid of a dielectric layer. This process involves the solution treatment of the InP surface. The presence of ruthenium on the surface was determined by X-ray photoelectron spectroscopy. This process is reproducible and stable with respect to time. The authors discuss results on MIS capacitors fabricated simultaneously with and without this surface treatment.