A Physical Model on Scattering at High-$\kappa$ Dielectric/$\hbox{SiO}_{2}$ Interface of SiGe p-MOSFETs

In this brief, a physical model describing the scattering of holes in the channel of SiGe p-MOSFET caused by roughness and charged defects at/near the high- K dielectric/SiO
₂
interface is proposed. Using the Fang-Howard's variational wave function, the hole mobility is calculated with consideration of the above two scattering mechanisms. The effects of device parameters such as the thicknesses and permittivities of the high- dielectric and interlayer on the hole mobility are discussed.