Gas Cluster Ion Beam Processing for Si Photonics

Gas cluster ion beam (GCIB) process is applied for surface smoothing of one dimensional photonic band gap structure. After argon GCIB irradiations, hillocks on the Si
₃
N
₄
surface were preferentially removed and smooth surface was realized. Reflectance spectra of PBG structure after Ar-GCIB irradiation was much closer to that of the theoretical line than that of the as-deposited sample. GCIB process will be a candidate for precise pattern formation which is required for Si micro photonics.