Measurements of Permittivity and Dielectric Loss Tangent of High Resistivity Float Zone Silicon at Microwave Frequencies

Real part of permittivity and the dielectric loss tangent of float zone high resistivity Silicon were measured at microwave frequencies at temperatures from 10 K up to 380 K employing dielectric resonator technique. The real part of permittivity proved to be frequency independent and the decrease in dielectric loss tangent versus frequency proved to be not entirely proportional to the inverse of frequency. At temperatures below 25 K where all free carriers are frozen-out loss tangents values the order of 10
^-4
were measured.