Dose Rate Upset Investigations on the Xilinx Virtex IV Field Programmable Gate Arrays

The following paper describes the results of ionizing dose rate investigations into upset, supply photocurrent, latch-up, and burnout susceptibility of the Xilinx Virtex IV XC4VFX12. All investigations were performed on a commercial version of the device. The maximum no-upset dose rate was 2.8times10
⁸
rad(Si)/s. Photocurrent amplitudes as a function of dose rate were recorded.