Reliable 3D damascene MIM architecture embedded into Cu interconnect for a Ta2O5 capacitor record density of 17 fF/μm2

A new simple 3D Damascene architecture requiring only one additional mask is introduced for high-density MIM capacitors. TiN/Ta
₂
O
₅
/TiN stack deposited by PEALD has been integrated between Cu interconnect levels to maximize quality factor Q, reaching up to 17 fF/μm
²
capacitance. High-performance, breakdown voltages over 15 V and good linearity, C
₁
= 76 ppm/V and C
₂
= 63 ppm/V
²
at 100 kHz, make this capacitor an unique solution for analog and RF applications embedded in Cu BEOL.