Modeling Transient Radiation Effects in Power MOSFETs

Using standard device specifications and simple assumptions, the transient radiation response of VDMOS MOSFETs can be modeled in a standard circuit analysis program. The device model consists of a body diode, a parasitic bipolar transistor, and elements to simulate high-current reduced breakdown. The attached photocurrent model emulates response to any pulse shape and accounts for bias-dependent depletion regions. The model can be optimized to best fit available test data.