A (Ga,Al) as Semiconductor Scintillator with Monolithically Integrated Photodiode: A New Detector

A new type of a particle detector with a (Ga, Al) As-GaAs heterojunction is demonstrated. A liquid phase epitaxial (Ga, Al) As layer of up to 150 μm thickness with graded band gap acts as scintillator and the junction as photodiode with GaAs as absorbing layer. The device can be operated without bias. Particle spectra are presented and the position dependent net e,h pair creation energy is discussed.