Ground Level and Estimated Space Performance of Cadmium Sulfide, Gallium Arsenide, Dendritic Silicon, and V-Ridge Concentrating Photovoltaic Panels

This paper describes the physical characteristics and electrical characteristics under ground-level natural sunlight conditions of four research solar cell panel types; namely, cadmium sulfide, gallium arsenide, dendritic silicon and a V-ridge concentrating panel utilizing conventional P on N silicon cells. These panels were designed, fabricated, and tested with intentions of including them in a solar cell panel orbital experiment planned and directed by the Research and Technology Division's Air Force Aero Propulsion Laboratory at Wright-Patterson AFB, Ohio. Furthermore, all research panel types except the V-ridge concentrating panel, were supplied through applied research programs in progress under the cognizance of the AF Aero Propulsion Laboratory. The V-ridge concentrating panels were supplied under a subcontract between the vehicle contractor (Lockheed Missiles and Space Company) and the Boeing Airplane Company.