A Modified PseudoMOS Technique to Characterize Interface Quality of SOI Wafers

We developed a new pseudoMOSFET technique by using an additional metallization, which directly contacts the Si-film to source and drain by Schottky contacts. In contrast to probe measurements, the drain current characteristics are independent of mechanical forces, and geometrical edge effects do not appear in electrical characteristics. We examined a variety of different contact metals in order to measure the mobility of electrons as well as holes. A theoretical explanation for the influence of the metal contacts on the electrical characteristics is presented.