Effects of dynamic stressing on nitrided and reoxidized-nitrided chemical-vapor-deposited gate oxides

The degradation behaviour of thin (110 AA) nitrided and reoxidized-nitrided chemical-vapor-deposited (CVD) SiO/sub 2/ MOS gate dielectrics under dynamic voltage and current stressing is discussed. Results indicate that dynamic stressing increases charge-to-breakdown Q/sub bd/ and reduces charge trapping and midgap interface state generation within the dielectrics. These improvements, which can be explained by charge detrapping under dynamic stressing, depend on process conditions and the stress duty cycle.<
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