High-Power Broadband Superluminescent Diode Using Selective Area Growth at 1.5-$\mu$ m Wavelength

Superluminescent diode with a selectively grown multiquantum-well layer is demonstrated. The device consists of an angled facet single-mode waveguide with a rear absorption region. High output power (77 mW), wide spectral bandwidth (71-nm full-width at half-maximum), and a very small spectral modulation (0.7 dB) were achieved with a short length absorption region.